Web1 Nov 2002 · In the ultra-thin LOCOS devices, the subthreshold swing is constant with width, around 70 mV/dec showing a minor influence of FBEs. But the swing drops below 60 mV/dec in the thicker films (between 40 and 55 mV/dec, depending on the specific width and thickness values) due to the appearance of FBEs. Download : Download full-size image … Webas subthreshold hump (hump) and the reverse narrow channel effect (RNCE) or the reverse narrow width effect (RNWE), which are caused by crowding of the gate fringing field at the STI corner.1–4) Therefore, much studies have been striven to reduce RNCE and the hump characteristics by controlling
Gate bias-stress induced hump-effect in transfer characteristics of …
Web22 Sep 2011 · Semiconductor materials ABSTRACT A hump in the subthreshold regime of the transfer characteristics is reported for amorphous-indium-galium-zinc-oxide thin-film transistors (TFTs) when they are exposed to large positive gate bias-stress. There are two main causes for the abnormal hump behavior owing to the device driving stress. The first is the constant voltage/current driving stress applied at the gate electrode, which is similar in character to that of the pixel driving transistors in the OLED display. Figure 2 shows various I–V characteristics … See more To understand the anomalous hump phenomena in Figs 2 and 3, a 2D numerical TCAD Atlas simulation method was used to calculate the device characteristics. Figure 4a,b show the density of the states … See more In the evaluation of the device characteristics, it was found that the hump phenomenon occurs only when the defect state appears in a specific location with a specific energy. … See more Up to this point, the discussion has been centered on the generation or increase of the defect states in the density of states as the cause of the hump. The occurrence of the channel edge … See more into the great wide open song lyrics
“Hump” characteristics and edge effects in polysilicon …
Web17 Jul 2024 · After positive bias stress (PBS) was applied to the device, an abnormal hump formed in subthreshold region and a hysteric effect appeared. Moreover, a subthreshold swing (SS) value difference between forward/reverse sweep in … Web31 Oct 2013 · In this paper, simple but very effective techniques to suppress subthreshold hump effect for high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) … Web1 Dec 2024 · The hump-effect is almost negligible against Vg stress (≤ 20 V) within 3000 s. However, as Vg stress becomes larger than 20 V, the hump in the subthreshold region is clearly observed. A reference voltage for the hump ( VH) is defined as the gate voltage at a drain current ( Id) of 10 −11 A for Vd of 1 V. into the green frauenfeld